Unlike power switching FETs, RF FETs are designed to work best in the linear region of operation to maximize power gain and minimize distortion, whereas power switching devices are optimized for ...
Santa Clara, Calif. — Agilent Technologies Inc. has introduced two FET single-pole double-throw (SPDT) solid-state switches for switching RF signals up to 18 GHz. TheAgilent U9397A and U9397C FET ...
Gallium nitride (GaN) RF transistors have traditionally been depletion mode, making them difficult to bias. High frequency enhancement mode transistors, such as the EPC8000 series eGaN FETs from EPC, ...
In mid-2010, GaN FET technology was made available to the general power conversion engineering community when Efficient Power Conversion (EPC) introduced the industry’s first commercially available ...
Electronic devices based on carbon nanotubes are among the candidates to eventually replace silicon-based devices for logic applications. Before then, however, nanotube-based radiofrequency ...
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