A research team has developed high-performance diamond/ε-Ga 2 O 3 heterojunction pn diodes based on ultrawide bandgap semiconductors, achieving breakdown voltages exceeding 3 kV. This work was ...

Although they are a simple device, diodes do have a number of traits to consider. These traits are often application dependent. Some applications include: rectifiers, signal ORing, transistor turn off ...

(Nanowerk News) Researcher at iGaN Lab, University of Science and Technology of China, have developed a multifunctional three-terminal diode that functions both as a light emitter and a detector. This ...