The direct band gap of AlN-based materials makes them suitable for fabricating DUV optoelectronic devices, which have a wide range of application prospects in the fields of curing, water and air ...
As an alternative to BeO substrates, the 100-NST-FN termination is constructed of aluminum nitride (AlN), reportedly making it environmentally friendly. The connector is available in BNC, N, TNC and 7 ...
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